RN1308(TE85L,F) – TOSHIBA
Part Number:
RN1308(TE85L,F)
Manufacturer:
Date Code:
UKN
RoHS:
RoHS Compliant
MSL:
1
COO:
THAILAND
Description:
NPN Bipolar Transistor, 0.1 A I(C), 50 V V(BR)CEO, Silicon, 1‑Element
Datasheet:
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Stock Quantity: 75
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.99 |
| 10+ | |
| 50+ | |
| 100+ |
75 in stock
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Product Details:
Overview
The RN1308(TE85L,F) is a single NPN bipolar junction transistor manufactured by TOSHIBA. This silicon-based transistor is designed for general-purpose amplification and switching applications. It features a collector current (I(C)) rating of 0.1 A and a collector-emitter breakdown voltage (V(BR)CEO) of 50 V. The component is supplied in a surface-mount package.
Key Features
- NPN Silicon Transistor
- Collector Current (Ic): 0.1A
- Collector-Emitter Voltage (Vceo): 50V
- Single Element Configuration
Applications
This NPN transistor is commonly used in various electronic circuits requiring signal amplification or switching. Its characteristics make it suitable for low to medium power applications across different industries.
- Amplifier Circuits
- Switching Circuits
- Signal Processing
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