RD01MUS2B-501 – MITSUBISHI
Part Number:
RD01MUS2B-501
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
COO:
Description:
527 MHz Transistor, 1 W, 7.2 V
Datasheet:
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Product Details:
Overview
The RD01MUS2B-501 is a silicon MOSFET power transistor manufactured by MITSUBISHI. This device is designed for RF power amplification at 527 MHz. It delivers a power output of 1 Watt with an operating voltage of 7.2 Volts. The component is supplied in a surface-mount package.
Key Features
- Frequency: 527 MHz
- Output Power: 1 Watt
- Voltage: 7.2 V
- Transistor Type: Silicon MOSFET
Applications
This transistor is typically used in RF power amplifier stages for various communication systems. Its characteristics make it suitable for deployment in applications requiring moderate power levels and operating at or near the specified frequency.
- Mobile Radio Systems
- Wireless Communication Devices
- RF Signal Amplification
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