R5F1007EGNA – STANLEY

The R5F1007EGNA, manufactured by an unknown entity (likely a misattribution of manufacturer), is an 855nm infrared (IR) emitting diode. Its forward voltage (Vf) is specified at 3.2V, indicating the typical voltage drop across the diode when forward biased and conducting. The spectral output is centered at 855 nanometers, placing it within the near-infrared region. This wavelength is commonly used in remote control systems, optical sensing applications, and security systems. Further characterization, including radiant intensity, beam angle, and forward current (If) ratings, are necessary for complete design implementation. Without the manufacturer’s datasheet, critical parameters such as maximum forward current, reverse voltage, and thermal resistance remain unknown, limiting its practical application without further testing and characterization.