R1LV0408DSB-5SI#B0 – RENESAS

The R1LV0408DSB-5SI#B0 is a RENESAS manufactured, high-speed, asynchronous Static Random Access Memory (SRAM) device. It features a 4-Megabit (4,194,304 bits) memory array organized as 524,288 words by 8 bits. The device operates from a single 3.3V power supply and offers a typical access time of 5ns, enabling high-performance data retrieval and storage. The parallel interface allows for direct connection to a microprocessor or digital signal processor with a corresponding 8-bit data bus. It is packaged in a 32-lead Thin Small Outline Package (TSOP) Type II, facilitating surface mount assembly onto printed circuit boards. The #B0 suffix may denote a specific revision or production lot. This SRAM is suitable for applications requiring fast data access and moderate memory density, such as cache memory, buffer memory, and embedded systems.