PZT2222AT1G – ONSEMI

Part Number:

PZT2222AT1G

Manufacturer:

ONSEMI

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

Bipolar (BJT) Transistor NPN 40 V 600 mA 300MHz 1.5 W Surface Mount SOT-223 (TO-261)

Datasheet:

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Product Details:

Overview

The PZT2222AT1G is an NPN bipolar junction transistor (BJT) manufactured by ONSEMI. This component is designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage of 40V and a continuous collector current rating of 600mA. The transistor is supplied in a SOT-223 surface-mount package, also known as TO-261.

Key Features

NPN Bipolar Junction Transistor
40V Collector-Emitter Voltage
600mA Continuous Collector Current
300MHz Transition Frequency
1.5W Power Dissipation

Applications

This transistor is suitable for a variety of electronic circuits requiring signal amplification or electronic switching. Its specifications make it a practical choice for use in consumer electronics, industrial control systems, and power management modules.

Signal Amplification Circuits
General Purpose Switching
Consumer Electronics
Industrial Control