PSMB050N10NS2_R2_00601 – PANJIT

Part Number:

PSMB050N10NS2_R2_00601

Manufacturer:

PANJIT

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

100 V, 120 A N‑Channel MOSFET, 4.3 mOhm, TO‑263 Package

Datasheet:

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Product Details:

Overview

The PSMB050N10NS2_R2_00601 is an N-Channel enhancement mode MOSFET manufactured by PANJIT. This device is designed for high-efficiency switching applications, offering a drain-source voltage (Vds) rating of 100V and a continuous drain current (Id) of 120A. It features a low on-resistance (Rds(on)) of 4.3 mOhm and is supplied in a TO-263 package for surface mount assembly.

Key Features

100V Drain-Source Voltage
120A Continuous Drain Current
4.3 mOhm On-Resistance (Rds(on))
N-Channel Enhancement Mode

Applications

This MOSFET is suitable for various power management and switching circuits that require efficient performance. Its low on-state resistance minimizes power losses, making it ideal for demanding environments.

Synchronous Rectification
DC-DC Converters
Motor Control