PMD2333RV1.2 – INFINEON
INFINEON D/C 0206
Stock Quantity: 979
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 2.92 |
| 10+ | |
| 50+ | |
| 100+ |
979 in stock
Contact us for volume pricing
- Same day shipping if ordered before 14.00 GMT
- 6 month warranty on all stock items
- All stock held and shipped from our UK warehouse
- Worldwide shipping available, contact us for a quotation
- We can ship on your DHL or UPS account if required
- Any import duties or taxes are the responsibility of the receiver
The Infineon PMD2333RV1.2 is a dual N-channel enhancement mode MOSFET, optimized for high-efficiency synchronous rectification in isolated DC-DC converters. It features extremely low on-resistance (Rds(on)) at both 4.5V and 10V gate drive, minimizing conduction losses. The device is rated for a 25V output voltage and a continuous drain current of 10A per channel, making it suitable for applications requiring moderate power levels. Housed in a space-saving, thermally enhanced Power SO-8 SMD package, the PMD2333RV1.2 offers excellent thermal performance. Its operating temperature range spans –55°C to 150°C, ensuring robust operation in demanding environments. Common use cases include secondary-side rectification in telecom power supplies and server power management. Advantages include reduced power dissipation, improved efficiency, and simplified thermal management due to its optimized design and low Rds(on).
