PJW1NA60A_R2_00201 – PANJIT

Part Number:

PJW1NA60A_R2_00201

Manufacturer:

PANJIT

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

N-Channel MOSFET, 600 V, 1 A, 7200 mOhm, SOT-223 Package

Datasheet:

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Product Details:

Overview

The PJW1NA60A_R2_00201 is an N-Channel enhancement mode MOSFET manufactured by PANJIT. This transistor is designed for high-voltage switching applications, offering a drain-source voltage rating of 600V and a continuous drain current of 1A. It features a typical on-state resistance of 7200 mOhm and is supplied in a compact SOT-223 package for surface mount assembly.

Key Features

N-Channel Enhancement Mode
600V Drain-Source Voltage (Vds)
1A Continuous Drain Current (Id)
7200 mOhm On-State Resistance (Rds(on))
SOT-223 Surface Mount Package

Applications

This N-Channel MOSFET is commonly used in power management circuits and switching regulators. Its high voltage rating makes it suitable for applications requiring robust performance in demanding electrical environments.

High-Voltage DC-DC Converters
Power Switching Circuits
LED Lighting Drivers