PJMB210N65EC_R2_00601 – PANJIT
Part Number:
PJMB210N65EC_R2_00601
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
N-Channel MOSFET, 650 V, 19 A, 210 mOhm, TO-263 Package
Datasheet:
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Product Details:
Overview
The PJMB210N65EC_R2_00601 is an N-Channel enhancement mode MOSFET manufactured by PANJIT. This transistor features a drain-source voltage rating of 650V and a continuous drain current capability of 19A. It has a typical on-state resistance of 210 mOhm. The device is supplied in a TO-263 package for surface mount assembly.
Key Features
- N-Channel Enhancement Mode
- 650V Drain-Source Voltage
- 19A Continuous Drain Current
- 210 mOhm On-State Resistance (typical)
Applications
This MOSFET is suitable for various power switching applications requiring high voltage and moderate current handling. Its characteristics make it appropriate for use in circuits demanding efficient power control and conversion.
- Switch Mode Power Supplies (SMPS)
- Power Factor Correction (PFC) circuits
- DC-DC Converters
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