PJD80N04S-AU_L2_002A1 – PANJIT

Electronic Components
 
Part Number:
PJD80N04S-AU_L2_002A1
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
CHINA
 
 
Description:

40 V, 190 A, 1.65 mOhm N‑Channel MOSFET, TO‑252AA Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The PJD80N04S-AU_L2_002A1 is a discrete N-Channel MOSFET manufactured by PANJIT. This component is designed for switching and amplification applications, offering a drain-source voltage rating of 40V and a continuous drain current of 190A. It is housed in a TO-252AA package, suitable for surface mount assembly.

Key Features

  • 40V Drain-Source Voltage (Vds)
  • 190A Continuous Drain Current (Id)
  • 1.65 mOhm On-State Resistance (Rds(on))
  • N-Channel Enhancement Mode

Applications

This MOSFET is typically used in power management circuits, motor control systems, and synchronous rectification. Its low on-resistance minimizes power dissipation, making it suitable for high-efficiency designs.

  • DC-DC Converters
  • Motor Drives
  • Load Switching
 
 
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