NTJD4001NT1G – ONSEMI

Electronic Components
 
Part Number:
NTJD4001NT1G
 
 
Manufacturer:
 
 
Date Code:
21
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
CHINA
 
 
Description:

Dual N‑Channel MOSFET, 30 V, 0.25 A, SC‑88 Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The NTJD4001NT1G is a dual N-Channel MOSFET manufactured by ONSEMI. This component is designed for low-side switching applications, providing efficient power control with a drain-source voltage rating of 30 V and a continuous drain current of 0.25 A. It is housed in a compact SC-88 surface-mount package, suitable for space-constrained designs.

Key Features

  • Dual N-Channel Configuration
  • 30 V Drain-Source Voltage (Vds)
  • 0.25 A Continuous Drain Current (Id)
  • Low On-Resistance (Rds(on))
  • SC-88 Package

Applications

This dual N-Channel MOSFET is commonly used in various electronic circuits requiring efficient switching and amplification. Its small size and electrical characteristics make it suitable for portable devices and other applications where board space is limited.

  • Load Switching
  • DC-DC Conversion
  • Power Management Circuits
 
 
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