NGD8205ANT4G – LITTELFUSE
Part Number:
NGD8205ANT4G
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
COO:
Description:
390 V, 20 A N-Channel IGBT Chip, 125 W, DPAK Package
Datasheet:
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Product Details:
Overview
The NGD8205ANT4G is an N-Channel Insulated Gate Bipolar Transistor (IGBT) manufactured by LITTELFUSE. This component is designed for high-voltage, high-current switching applications. It features a collector-emitter breakdown voltage of 390V and a continuous collector current rating of 20A. The device has a power dissipation rating of 125W and is supplied in a DPAK package.
Key Features
- 390V Collector-Emitter Voltage
- 20A Continuous Collector Current
- 125W Power Dissipation
- N-Channel Configuration
- DPAK Package
Applications
This IGBT is suitable for use in various power electronics circuits requiring efficient switching at elevated voltage and current levels. Its characteristics make it appropriate for use in several application areas.
- Motor Control Circuits
- Uninterruptible Power Supplies (UPS)
- Induction Heating
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