NE32584C – NEC

Part Number:

NE32584C

Manufacturer:

NEC

Date Code:

UNKNOWN

RoHS:

RoHS Unknown

MSL:

COO:

Description:

RF Small Signal GaAs N‑Channel High Electron Mobility FET, KU Band

Datasheet:

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Stock Quantity: 124

Selling Unit: Each

Quantity	Price (ex VAT)
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124 in stock

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Product Details:

Overview

The NE32584C is an RF small signal GaAs N-Channel High Electron Mobility Field Effect Transistor (HEMT) manufactured by NEC. This discrete transistor is designed for high-frequency applications, specifically within the KU band. It is supplied in a surface-mount package suitable for automated assembly.

Key Features

GaAs N-Channel HEMT technology
Optimized for KU band operation
Surface mount package
High electron mobility

Applications

This RF transistor is typically used in applications requiring low noise amplification and high-frequency signal processing. Its characteristics make it suitable for use in various communication and radar systems.

Low Noise Amplifiers (LNAs)
Satellite communication systems
Radar receivers