P‑Channel MOSFET, 30 V, 1.1 A, SuperSOT‑3 Package
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The NDS356AP is a P-Channel enhancement mode MOSFET manufactured by Fairchild Semiconductor (FSC). This transistor is designed for low voltage, high-side load switching applications. It features a drain-source voltage rating of 30V and a continuous drain current of 1.1A. The NDS356AP is supplied in a compact SuperSOT-3 surface-mount package.
This P-Channel MOSFET is commonly used in portable devices and power management circuits where efficient load switching is required. Its small size and low on-resistance make it suitable for space-constrained applications.