MPMC150B120RH – MAGNACHIP SEMICONDUCTOR CORP
Part Number:
MPMC150B120RH
Manufacturer:
Date Code:
2015
RoHS:
RoHS Compliant
MSL:
COO:
Description:
1200 V, 200 A N‑Channel Insulated Gate Bipolar Transistor
Datasheet:
Spotted a problem with product information? – let us know
ORDER NOW
Stock Quantity: 2
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 74.99 |
| 10+ | |
| 50+ | |
| 100+ |
2 in stock
Contact us for volume pricing
- Same day shipping if ordered before 14.00 GMT
- 6 month warranty on all stock items
- All stock held and shipped from our UK warehouse
- Worldwide shipping available, contact us for a quotation
- We can ship on your DHL or UPS account if required
- Any import duties or taxes are the responsibility of the receiver
Product Details:
Overview
The MPMC150B120RH is a 1200V, 200A N-Channel Insulated Gate Bipolar Transistor (IGBT) manufactured by MAGNACHIP SEMICONDUCTOR CORP. This device is designed for high-voltage, high-current switching applications. It offers efficient performance in power electronics circuits and comes in a standard package suitable for automated assembly.
Key Features
- 1200V Collector-Emitter Voltage
- 200A Continuous Collector Current
- N-Channel Configuration
- Low Saturation Voltage
Applications
This IGBT is commonly employed in circuits that require efficient and reliable switching of high voltages and currents. Its characteristics make it suitable for deployment in various industrial and power conversion systems.
- Motor Drives
- Uninterruptible Power Supplies (UPS)
- Induction Heating
Spotted a problem with product information? – let us know