MMBF170LT1G – ONSEMI

Part Number:

MMBF170LT1G

Manufacturer:

ONSEMI

Date Code:

21+

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

N-Channel MOSFET, 60 V, 500 mA, SOT23-3 Package

Datasheet:

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Product Details:

Overview

The MMBF170LT1G is a discrete N-Channel MOSFET manufactured by ONSEMI. This transistor is designed for low-power switching applications. It features a drain-source voltage rating of 60V and a continuous drain current of 500mA. The component is housed in a compact SOT23-3 surface-mount package, suitable for high-density circuit board layouts.

Key Features

N-Channel Enhancement Mode
60V Drain-Source Voltage (Vds)
500mA Continuous Drain Current (Id)
Low Gate Threshold Voltage

Applications

This MOSFET is commonly used in various electronic circuits where efficient switching is required. Its small size and electrical characteristics make it suitable for portable devices and space-constrained applications. It is designed for general purpose switching and amplification.

DC-DC Converters
Load Switching
Small Signal Amplification