MJN1108MS-TR – STANLEY
Part Number:
MJN1108MS-TR
Manufacturer:
STANLEY
Date Code:
23
RoHS:
RoHS Compliant
MSL:
2A
COO:
JAPAN
Description:
INFRARED (IR) EMITTER 855NM 3.2V
Datasheet:
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Product Details:
The MJN1108MS-TR, manufactured by STANLEY, is an aluminum gallium arsenide (AlGaAs) infrared emitting diode (IRED) designed for applications requiring efficient 855nm near-infrared radiation. This device exhibits a forward voltage of approximately 3.2V at its rated forward current, which is typically 50mA. Its spectral bandwidth is approximately 40nm at half power. The device is surface-mountable, utilizing a compact molded surface mount package suitable for automated assembly. The “TR” suffix indicates tape and reel packaging for high-volume manufacturing. Optical output power is typically 15mW at 50mA. The MJN1108MS-TR is commonly employed in remote control systems, light curtains, photoelectric sensors, and other applications where a focused, high-intensity IR source is required.
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