MGSF1N02LT1G – ONSEMI

Part Number:

MGSF1N02LT1G

Manufacturer:

ONSEMI

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

N‑Channel MOSFET, 20 V, 750 mA, SOT‑23‑3 Package

Datasheet:

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Product Details:

Overview

The MGSF1N02LT1G is a N-Channel enhancement mode MOSFET manufactured by ONSEMI. This transistor is designed for low voltage, low current switching applications. It features a drain-source voltage rating of 20V and a continuous drain current of 750mA. The component is supplied in a compact SOT-23-3 surface mount package, suitable for high-density circuit board designs.

Key Features

N-Channel MOSFET
20V Drain-Source Voltage (Vds)
750mA Continuous Drain Current (Id)
Low On-Resistance (Rds(on))

Applications

This MOSFET is commonly used in portable electronic devices and battery-powered systems where efficient power management is essential. Its small size and low voltage operation make it suitable for a variety of control and switching functions.

Load Switching
DC-DC Conversion
Power Management Circuits