MGF2407A – MITSUBISHI

Part Number:

MGF2407A

Manufacturer:

MITSUBISHI

Date Code:

RoHS:

MSL:

COO:

Description:

KU Band RF Power Field‑Effect Transistor, Gallium Arsenide, N‑Channel, Metal‑Oxide Semiconductor

Datasheet:

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Product Details:

Overview

The MGF2407A is a KU Band RF Power Field-Effect Transistor manufactured by MITSUBISHI. This GaAs (Gallium Arsenide) transistor utilizes N-Channel Metal-Oxide Semiconductor (MOS) technology. It is designed for power amplification in the KU frequency band and is supplied in a discrete package suitable for surface mounting.

Key Features

KU Band operation
GaAs N-Channel MOS structure
RF power amplification
Surface mount package

Applications

This RF power transistor is commonly employed in communication systems and radar applications. Its characteristics make it suitable for use in environments needing signal amplification at KU band frequencies.

Satellite communication systems
Radar Transmitters
Microwave communication links