MGF1801B-01 – MITSUBISHI

Part Number:

MGF1801B-01

Manufacturer:

MITSUBISHI

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

X-Band RF Power GaAs MESFET, N-Channel

Datasheet:

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Product Details:

Overview

The MGF1801B-01 is an X-Band RF power Gallium Arsenide (GaAs) MESFET from MITSUBISHI. This N-Channel transistor is designed for high-frequency power amplification in the X-Band spectrum. It is commonly used in radar and communication systems requiring reliable power output at microwave frequencies. The component is supplied in a discrete package suitable for surface mount assembly.

Key Features

X-Band Operation
GaAs MESFET Technology
N-Channel Configuration
High Power Amplification

Applications

This MESFET is suitable for use in various high-frequency applications that require power amplification. Its characteristics make it appropriate for deployment in systems where signal strength and reliability are paramount.

Radar Systems
Microwave Communication Links
Satellite Communication Uplinks