MB85R1001ANC-GE1 – FUJITSU
Part Number:
MB85R1001ANC-GE1
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
JAPAN
Description:
128Kx8 FRAM, 3.0 V, TSOP48 Package
Datasheet:
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Product Details:
Overview
The MB85R1001ANC-GE1 is a 1 Mbit Ferroelectric Random Access Memory (FRAM) device manufactured by FUJITSU. This non-volatile memory offers fast write speeds and high endurance. It is organized as 128K words by 8 bits and operates at 3.0V. The component is supplied in a TSOP48 package, suitable for surface mount assembly.
Key Features
- 1 Mbit (128K x 8) memory array
- 3.0V operating voltage
- Fast write cycle time
- High endurance (10^12 read/write cycles)
- TSOP48 package
Applications
This FRAM device is suitable for applications requiring frequent and rapid data logging, buffering, or storage where data retention is critical even during power loss. Its high endurance makes it ideal for environments with continuous write operations.
- Data logging systems
- Industrial control equipment
- Smart meters
- Medical devices
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