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The M67742, manufactured by Mitsubishi, is a discrete silicon NPN bipolar power transistor intended for use in VHF/UHF power amplifier applications. Characterized by a high transition frequency (fT) typically exceeding 1 GHz, the M67742 is designed for operation at 12.5V. Performance parameters include a collector-emitter breakdown voltage (VCEO) of at least 18V and a collector current (IC) rating of 7A. This device is optimized for high gain and efficiency in the VHF and UHF bands, exhibiting a typical power gain of 10 dB at 175 MHz. Note that the M67742 is a legacy component and is not compliant with the Restriction of Hazardous Substances (RoHS) directive, indicating the presence of restricted materials such as lead in its construction.