K4T51163QN-BCE7000 – SAMSUNG
Part Number:
K4T51163QN-BCE7000
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
COO:
Description:
512 Mbit DDR2 SDRAM, 800 Mbps, 1.8 V, FBGA-84, 0°C to +95°C
Datasheet:
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Product Details:
Overview
The SAMSUNG K4T51163QN-BCE7000 is a 512 Mbit Double Data Rate 2 (DDR2) Synchronous Dynamic Random-Access Memory (SDRAM) component. It offers a data transfer rate of 800 Mbps and operates at a voltage of 1.8V. This memory device is packaged in an 84-ball Fine-Pitch Ball Grid Array (FBGA) and is designed for operation within a temperature range of 0°C to +95°C.
Key Features
- 512 Mbit memory density
- DDR2 SDRAM architecture
- 800 Mbps data rate
- 1.8V operating voltage
- FBGA-84 package
Applications
This DDR2 SDRAM is commonly used in systems requiring moderate-density, high-speed memory. Its operational temperature range makes it suitable for various computing and embedded environments.
- Desktop and laptop computers
- Graphics cards
- Embedded systems
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