K4B4G0846E-BYMA – SAMSUNG
Part Number:
K4B4G0846E-BYMA
Manufacturer:
Date Code:
TBC
RoHS:
RoHS Compliant
MSL:
COO:
Description:
512Mx8 DDR3 SDRAM, 1866Mbps, 1.35V, 0-85°C, 78-FBGA Package.
Datasheet:
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Product Details:
Overview
The SAMSUNG K4B4G0846E-BYMA is a 4Gb DDR3 SDRAM component organized as 512M x 8. This dynamic random-access memory operates at a data transfer rate of 1866 Mbps and requires a supply voltage of 1.35V. It is housed in a 78-ball FBGA package and designed for operation across a temperature range of 0°C to 85°C.
Key Features
- 4Gb (512M x 8) memory density
- DDR3 SDRAM technology
- 1866 Mbps data rate
- 1.35V operating voltage
Applications
This DDR3 SDRAM is commonly used in systems requiring high-speed memory access and moderate power consumption. Its operating temperature range makes it suitable for various embedded and computing environments.
- Desktop and laptop computers
- Embedded systems
- Networking devices
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