N‑Channel MOSFET, 200 V, 5.5 A, TO205AF Package
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The JANTX2N6798 is a N-Channel enhancement mode MOSFET manufactured by MICRO SEMI. This transistor is designed for switching and amplification applications, offering a drain-source voltage rating of 200V and a continuous drain current of 5.5A. It is supplied in a hermetically sealed TO205AF package, ensuring reliability in demanding environments.
This MOSFET is suitable for use in various power control and signal amplification circuits. Its voltage and current handling capabilities make it appropriate for designs requiring efficient switching performance and ruggedness.