IXFN70N60Q2 – IXYS

Part Number:

IXFN70N60Q2

Manufacturer:

IXYS

Date Code:

20+

RoHS:

RoHS Compliant

MSL:

COO:

SOUTH KOREA

Description:

N‑Channel MOSFET, 600 V, 70 A, SOT‑227B Package

Datasheet:

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Product Details:

Overview

The IXFN70N60Q2 is a discrete N-Channel enhancement mode MOSFET manufactured by IXYS. This component is designed for high-voltage, high-current switching applications. It features a drain-source voltage rating of 600V and a continuous drain current capability of 70A. The device is packaged in a SOT-227B housing, providing efficient thermal dissipation.

Key Features

600V Drain-Source Voltage (Vds)
70A Continuous Drain Current (Id)
N-Channel Enhancement Mode
SOT-227B Package

Applications

This MOSFET is commonly employed in power electronic circuits requiring efficient and reliable switching at elevated voltages. Its characteristics make it suitable for various industrial and commercial environments.

Switch Mode Power Supplies (SMPS)
Motor Control Circuits
High Voltage DC-DC Converters