IRG4PSH71UDPBF – INFINEON

Part Number:

IRG4PSH71UDPBF

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MEXICO

Description:

N‑Channel 1200 V, 99 A IGBT Chip, 350000 mW, 3‑Pin TO‑274AA

Datasheet:

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Product Details:

Overview

The IRG4PSH71UDPBF is an N-Channel Insulated Gate Bipolar Transistor (IGBT) chip manufactured by Infineon. This component is designed for high-voltage, high-current switching applications. It features a 1200V collector-emitter voltage rating and a continuous collector current of 99A. The device is packaged in a 3-Pin TO-274AA package and has a power dissipation rating of 350000 mW.

Key Features

1200V Collector-Emitter Voltage
99A Continuous Collector Current
350000 mW Power Dissipation
N-Channel Configuration

Applications

This IGBT chip is typically used in power electronics systems requiring efficient high-voltage switching. Its characteristics make it suitable for various industrial and energy-related applications.

Uninterruptible Power Supplies (UPS)
Welding Equipment
Induction Heating