IRF9630 – SAMSUNG

Part Number:

IRF9630

Manufacturer:

SAMSUNG

Date Code:

RoHS:

MSL:

COO:

Description:

P-Channel 200 V 6.5A (Tc) 74W (Tc) Through Hole TO-220AB

Datasheet:

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Product Details:

Overview

The SAMSUNG IRF9630 is a P-Channel enhancement mode MOSFET designed for power switching applications. This device features a voltage rating of 200V and a continuous drain current of 6.5A when the case temperature is maintained at 25°C. Power dissipation is rated at 74W under the same conditions. The IRF9630 is supplied in a TO-220AB through-hole package.

Key Features

P-Channel Enhancement Mode
Voltage Rating: 200V
Continuous Drain Current: 6.5A (Tc=25°C)
Power Dissipation: 74W (Tc=25°C)

Applications

This MOSFET is commonly utilized in circuits requiring high-side switching or load control. Its characteristics make it suitable for various electronic systems, specifically where a P-channel device is necessary for efficient power management.

High-Side Switching
DC-DC Converters
Motor Control