IRF7389TRPBF – INFINEON

Part Number:

IRF7389TRPBF

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

Dual N/P‑Channel HEXFET® Power MOSFET, 30 V, 0.029/0.058 Ohm, SOIC‑8 Package

Datasheet:

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Product Details:

Overview

The IRF7389TRPBF is a dual N/P-Channel HEXFET® Power MOSFET manufactured by Infineon Technologies. This device integrates both an N-channel and a P-channel MOSFET within a single SOIC-8 package. It is designed for power switching applications requiring complementary transistor configurations, operating at a drain-source voltage of 30V with on-resistance values of 0.029 Ohms (N-Channel) and 0.058 Ohms (P-Channel).

Key Features

Dual N/P-Channel Configuration
30V Drain-Source Voltage (Vds)
Low On-Resistance: 0.029 Ohm (N-Channel)
Low On-Resistance: 0.058 Ohm (P-Channel)
SOIC-8 Surface Mount Package

Applications

This dual MOSFET is commonly used in various power management and control circuits. Its complementary configuration allows for efficient push-pull operation and simplified gate drive requirements in several electronic systems.

DC-DC Converters
Load Switching
Power Inverters