IRF710R – HARRIS

Part Number:

IRF710R

Manufacturer:

HARRIS

Date Code:

RoHS:

Non-RoHS

MSL:

COO:

Description:

Power Field-Effect Transistor, 2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Datasheet:

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Product Details:

Overview

The IRF710R is a power field-effect transistor manufactured by HARRIS. This N-Channel MOSFET is designed for power switching applications. It features a drain current (I(D)) rating of 2A and utilizes metal-oxide semiconductor (MOS) technology for efficient operation. The IRF710R is a single-element transistor.

Key Features

N-Channel MOSFET
2A Drain Current (I(D))
Metal-Oxide Semiconductor (MOS) Technology
Single Element Configuration

Applications

This power MOSFET is suitable for a variety of electronic circuits requiring efficient power control and switching. Its characteristics make it useful in systems where a moderate current capacity is needed.

DC-DC Converters
Power Inverters
Motor Control Circuits