IRF200P222 – INFINEON

Part Number:

IRF200P222

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

AUSTRIA

Description:

200 V, 182 A, 5.3 mOhm N‑Channel MOSFET, TO‑247AC Package

Datasheet:

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Product Details:

Overview

The IRF200P222 is an N-Channel Power MOSFET manufactured by Infineon. This device is designed for high-current switching applications, featuring a drain-source voltage rating of 200V and a continuous drain current of 182A. It exhibits a low on-state resistance of 5.3 mOhms, minimizing power dissipation. The component is housed in a TO-247AC package for efficient thermal management.

Key Features

200V Drain-Source Voltage
182A Continuous Drain Current
5.3 mOhm On-State Resistance
N-Channel Enhancement Mode

Applications

This MOSFET is suitable for various power electronics applications requiring efficient and reliable switching. Its characteristics make it appropriate for use in systems where minimizing losses and managing thermal performance are critical considerations.

Synchronous Rectification
DC-DC Converters
Motor Control