IRF1018EPBF – INFINEON

Electronic Components
 
Part Number:
IRF1018EPBF
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
CHINA
 
 
Description:

N-Channel MOSFET, 60 V, 79 A, 8.4 mOhm, TO-220-3

 
 
Datasheet:
 
 
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Product Details:

Overview

The IRF1018EPBF is an N-Channel Power MOSFET manufactured by Infineon Technologies. This component is designed for high-efficiency switching applications, offering a drain-source voltage of 60V and a continuous drain current of 79A. It features a low on-state resistance of 8.4 mOhm and is provided in a TO-220-3 package for effective thermal dissipation.

Key Features

  • N-Channel MOSFET technology
  • Vds: 60V Drain-Source Voltage
  • Ids: 79A Continuous Drain Current
  • RDS(on): 8.4 mOhm On-State Resistance
  • TO-220-3 Through-Hole Package

Applications

This MOSFET is commonly utilized in power management circuits and systems that require efficient power conversion and control. Its electrical characteristics make it suitable for a range of industrial and commercial uses.

  • DC-DC converters
  • Motor control circuits
  • Power inverters
 
 
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