IPU80R1K0CEAKMA1 – INFINEON

Part Number:

IPU80R1K0CEAKMA1

Manufacturer:

INFINEON

Date Code:

1922

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

N-Channel MOSFET, 800V, 5.7A, 83W, PG-TO251-3-341 Package.

Datasheet:

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Stock Quantity: 1500

Selling Unit: Each

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1500 in stock

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Product Details:

Overview

The IPU80R1K0CEAKMA1 is an N-Channel MOSFET manufactured by Infineon. This component is designed for switching applications, offering a drain-source voltage of 800V and a continuous drain current of 5.7A. It features a power dissipation rating of 83W and is supplied in a PG-TO251-3-341 package.

Key Features

800V Drain-Source Voltage (Vds)
5.7A Continuous Drain Current (Id)
83W Power Dissipation (Pd)
N-Channel Enhancement Mode

Applications

This MOSFET is suitable for power management circuits and high-voltage switching systems. Its characteristics make it useful in various electronic devices and industrial equipment.

Switch-Mode Power Supplies (SMPS)
Power Factor Correction (PFC) circuits
High-Voltage DC-DC converters