N‑Channel MOSFET, 30 V, 35 A, OptiMOS3, TO‑251 Package
Stock Quantity: 260
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.42 |
| 10+ | |
| 50+ | |
| 100+ |
260 in stock
The IPS105N03L G is an N-Channel MOSFET manufactured by Infineon Technologies. This transistor is designed for switching and amplification applications, offering a drain-source voltage of 30V and a continuous drain current of 35A. It utilizes OptiMOS™3 technology for efficient power conversion and is housed in a TO-251 package for surface mount assembly.
This MOSFET is suitable for a variety of power management and control circuits. Its low on-resistance and fast switching speed make it appropriate for use in systems requiring high efficiency and compact design.