IPN50R1K4CE – INFINEON

Part Number:

IPN50R1K4CE

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

GERMANY

Description:

N‑Channel MOSFET, 500 V, 4.8 A, 1400 mOhm, SOT223 Package

Datasheet:

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Product Details:

Overview

The IPN50R1K4CE is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for switching applications requiring a drain-source voltage of up to 500V and a continuous drain current of 4.8A. It features a typical on-state resistance of 1400 mOhm and is provided in a SOT223 surface-mount package.

Key Features

500V Drain-Source Voltage (Vds)
4.8A Continuous Drain Current (Id)
1400 mOhm On-State Resistance (Rds(on))
N-Channel Enhancement Mode
SOT223 Package

Applications

This MOSFET is suitable for various power management and switching circuits where efficient high-voltage operation is necessary. Its characteristics make it useful in diverse electronic systems.

Switch-Mode Power Supplies (SMPS)
LED Lighting Drivers
DC-DC Converters