IPDD60R105CFD7 – INFINEON

Part Number:

IPDD60R105CFD7

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

GERMANY

Description:

N‑Channel, 600 V, 31 A MOSFET, 88 mOhm, HDSOP‑10‑1 Package

Datasheet:

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Product Details:

Overview

The IPDD60R105CFD7 is a discrete N-Channel MOSFET manufactured by Infineon. This power transistor is rated for 600V drain-source voltage and a continuous drain current of 31A. It features a typical on-state resistance of 88 mOhm. The component is supplied in a HDSOP-10-1 package, suitable for surface mount assembly.

Key Features

N-Channel enhancement mode
600V Drain-Source Breakdown Voltage
Low on-state resistance (Rds(on) = 88 mΩ)
High Avalanche Ruggedness
HDSOP-10-1 Surface Mount Package

Applications

This MOSFET is designed for power switching applications requiring high voltage and efficient operation. Its characteristics make it suitable for use in various industrial and commercial electronic systems.

Switch Mode Power Supplies (SMPS)
Motor Control Circuits
Uninterruptible Power Supplies (UPS)
High Voltage DC-DC Converters