IPD90N03S4L-02 – INFINEON

Part Number:

IPD90N03S4L-02

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

MOSFET, 30 V, 2.2 mOhm, AECQ Qualified, TO‑252 Package

Datasheet:

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Product Details:

Overview

The IPD90N03S4L-02 is a power MOSFET manufactured by Infineon Technologies. This N-channel enhancement mode transistor is designed for switching applications requiring low on-state resistance. It features a drain-source voltage rating of 30V and a typical on-resistance of 2.2 mOhm. This component is qualified according to AECQ101 standards for automotive applications and comes in a TO-252 package.

Key Features

30V Drain-Source Voltage
2.2 mOhm On-Resistance (typical)
N-Channel Enhancement Mode
AECQ101 Qualified

Applications

This MOSFET is suitable for various power management and switching circuits. Its low on-resistance makes it efficient in applications where minimizing power loss is crucial. The AECQ qualification ensures reliability in demanding automotive environments.

Automotive DC-DC converters
Motor control circuits
Load switching