N‑Channel MOSFET, 40 V, 100 A, 1.9 mOhm, TDSON‑8 Package
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The IPC100N04S5-1R9 is a discrete N-Channel MOSFET manufactured by Infineon. This component is designed for power switching applications, offering a drain-source voltage rating of 40V and a continuous drain current capability of 100A. It features a low on-state resistance of 1.9 mOhm, contributing to efficient power conversion. The device is supplied in a TDSON-8 surface-mount package.
This MOSFET is suitable for a variety of power management and switching circuits. Its low on-resistance and high current capacity make it effective in environments demanding efficient power handling and minimal losses.