IPB80N04S4-04 – INFINEON

Electronic Components
 
Part Number:
IPB80N04S4-04
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
MALAYSIA
 
 
Description:

N-Channel MOSFET, 40 V, 80 A, 4.2 mOhm, TO263‑3 Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The IPB80N04S4-04 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for switching applications requiring efficient power handling. It features a drain-source voltage rating of 40V and a continuous drain current of 80A. The component is housed in a TO263-3 package, suitable for surface mounting.

Key Features

  • N-Channel enhancement mode
  • VDS: 40V
  • ID: 80A
  • RDS(on): 4.2 mOhm (typical)

Applications

This MOSFET is commonly used in power management circuits and high-current switching implementations. Its low on-resistance contributes to reduced power losses and improved efficiency in various electronic systems.

  • DC-DC converters
  • Motor control circuits
  • Synchronous rectification
 
 
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