N-Channel MOSFET, 40 V, 80 A, 4.2 mOhm, TO263‑3 Package
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The IPB80N04S4-04 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for switching applications requiring efficient power handling. It features a drain-source voltage rating of 40V and a continuous drain current of 80A. The component is housed in a TO263-3 package, suitable for surface mounting.
This MOSFET is commonly used in power management circuits and high-current switching implementations. Its low on-resistance contributes to reduced power losses and improved efficiency in various electronic systems.