IPA80R1K0CE – INFINEON

Part Number:

IPA80R1K0CE

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

800 V, 5.7 A, 950 mOhm N‑Channel MOSFET, TO‑220FP Package

Datasheet:

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Product Details:

Overview

The IPA80R1K0CE is an 800V N-Channel MOSFET manufactured by Infineon. This power transistor is designed for switching applications requiring a drain current of up to 5.7A and features a typical on-state resistance of 950 mOhm. It is supplied in a TO-220FP package, providing electrical isolation and efficient thermal dissipation.

Key Features

800V Drain-Source Voltage (Vds)
5.7A Continuous Drain Current (Id)
950 mOhm On-State Resistance (Rds(on))
N-Channel Enhancement Mode
TO-220FP Package

Applications

This MOSFET is suitable for use in various power electronic circuits. Its high voltage rating and moderate current capability make it appropriate for applications requiring efficient power conversion and control.

Switch-Mode Power Supplies (SMPS)
Power Factor Correction (PFC) circuits
Lighting Ballasts
High-Voltage DC-DC converters