IPA60R180P7S – INFINEON

Part Number:

IPA60R180P7S

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

Not Applicable

COO:

CHINA

Description:

600 V, 26 A, 120 mOhm N‑Channel MOSFET, TO‑220FP Package

Datasheet:

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Product Details:

Overview

The IPA60R180P7S is a 600V N-Channel MOSFET manufactured by Infineon Technologies. This power transistor is designed for switching applications requiring efficient power management. It features a maximum drain-source resistance (RDS(on)) of 120 mOhms at a gate-source voltage of 10V and a continuous drain current of 26A. The component is housed in a TO-220FP package, offering full insulation.

Key Features

600V Drain-Source Voltage (VDS)
120 mOhm On-State Resistance (RDS(on))
26A Continuous Drain Current (ID)
N-Channel Enhancement Mode

Applications

This MOSFET is suitable for use in various power electronics circuits where efficient switching and low conduction losses are important. Its characteristics make it applicable in a range of industrial and consumer products.

Switch-Mode Power Supplies (SMPS)
Power Factor Correction (PFC) circuits
Uninterruptible Power Supplies (UPS)