IPA045N10N3 G – INFINEON

Part Number:

IPA045N10N3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

100 V, 64 A, 3.9 mOhm N‑Channel MOSFET, TO‑220FP Package

Datasheet:

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Product Details:

Overview

The IPA045N10N3 G is a discrete N-Channel MOSFET manufactured by Infineon Technologies. This power transistor is designed for switching applications requiring efficient power conversion. It features a drain-source voltage rating of 100V and a continuous drain current of 64A. The device exhibits a typical on-state resistance of 3.9 mOhm. It is supplied in a TO-220FP package, providing electrical isolation and ease of mounting.

Key Features

100V Drain-Source Voltage (Vds)
64A Continuous Drain Current (Id)
3.9 mOhm On-State Resistance (Rds(on))
Logic Level Input
TO-220FP Package

Applications

This N-Channel MOSFET is suitable for a variety of power management and switching circuits. Its low on-resistance minimizes power losses, making it ideal for high-efficiency designs. The TO-220FP package provides enhanced thermal performance and isolation for demanding environments.

Synchronous Rectification
DC-DC Converters
Motor Control