IMX1T110 – ROHM
BJT Array, Dual NPN, 50V, 150mA, 180MHz, 300mW, SMT6.
Stock Quantity: 3998
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.32 |
| 10+ | |
| 50+ | |
| 100+ |
3998 in stock
Contact us for volume pricing
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- 6 month warranty on all stock items
- All stock held and shipped from our UK warehouse
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Overview
The IMX1T110 is a dual NPN bipolar junction transistor (BJT) array manufactured by ROHM Semiconductor. This device integrates two independent NPN transistors within a single SMT6 surface-mount package. Each transistor is rated for a collector-emitter voltage of 50V and a collector current of 150mA, with a transition frequency of 180MHz. The total power dissipation for the array is 300mW.
Key Features
- Dual NPN Transistor Configuration
- 50V Collector-Emitter Voltage (Vceo)
- 150mA Collector Current (Ic)
- 180MHz Transition Frequency (fT)
- SMT6 Surface Mount Package
Applications
This BJT array is commonly used in various electronic circuits requiring multiple switching or amplification stages. Its compact size and integrated design make it suitable for applications where board space is limited. It is designed for general purpose amplification and switching.
- High-Speed Switching Circuits
- Small Signal Amplification
- Driver Stages