IMDQ75R016M1H – INFINEON

Part Number:

IMDQ75R016M1H

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

Silicon Carbide MOSFET, 750 V, 98 A, 20 mOhm at 15 V, HDSOP-22

Datasheet:

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Product Details:

Overview

The IMDQ75R016M1H is a Silicon Carbide (SiC) MOSFET manufactured by Infineon. This transistor is designed for high-voltage, high-current switching applications, offering a drain-source voltage rating of 750V and a continuous drain current capability of 98A. The device exhibits a typical on-state resistance of 20 mOhm when the gate-source voltage is 15V. It is supplied in an HDSOP-22 package.

Key Features

750V Drain-Source Voltage (Vds)
98A Continuous Drain Current (Id)
20 mOhm On-State Resistance (Rds(on) @ Vgs=15V)
Silicon Carbide (SiC) Technology
HDSOP-22 Package

Applications

This SiC MOSFET is suitable for use in power electronic systems requiring efficient and reliable high-voltage switching. Its characteristics make it appropriate for demanding operational conditions, where power losses must be minimized.

Solar Inverters
Electric Vehicle (EV) Chargers
Uninterruptible Power Supplies (UPS)
Power Factor Correction (PFC) circuits