SiC Diode, 650 V, 8 A, 2.10 V, TO‑220‑2 Package
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The IDH08G65C5 is a silicon carbide (SiC) Schottky diode manufactured by Infineon. This diode features a reverse voltage rating of 650V and a forward current capability of 8A. It exhibits a typical forward voltage drop of 2.10V. The component is housed in a TO-220-2 package.
This SiC diode is commonly used in power electronics applications requiring efficient and fast switching. Its characteristics make it suitable for use in circuits demanding high voltage and current handling capabilities.