512 Mbit Mobile SDRAM DRAM Chip, 16Mx32, 1.8 V, 90‑Pin FBGA
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The H55S5122EFR-60M is a 512 Mbit Mobile SDRAM component manufactured by HYNIX. This DRAM chip features a 16Mx32 memory configuration and operates at 1.8V. It is packaged in a 90-Pin FBGA for surface mount assembly.
This mobile SDRAM is designed for use in portable electronic devices requiring low power consumption and high memory bandwidth. It is suitable for embedded systems and handheld equipment where space is constrained.