H55S5122EFR-60M – HYNIX

Electronic Components
 
Part Number:
H55S5122EFR-60M
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
 
 
COO:
 
 
Description:

512 Mbit Mobile SDRAM DRAM Chip, 16Mx32, 1.8 V, 90‑Pin FBGA

 
 
Datasheet:
 
 
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Product Details:

Overview

The H55S5122EFR-60M is a 512 Mbit Mobile SDRAM component manufactured by HYNIX. This DRAM chip features a 16Mx32 memory configuration and operates at 1.8V. It is packaged in a 90-Pin FBGA for surface mount assembly.

Key Features

  • 512 Mbit Total Memory
  • 16M x 32 Organization
  • 1.8V Operating Voltage
  • 90-Pin FBGA Package

Applications

This mobile SDRAM is designed for use in portable electronic devices requiring low power consumption and high memory bandwidth. It is suitable for embedded systems and handheld equipment where space is constrained.

  • Mobile Phones
  • Portable Media Players
  • Handheld Gaming Consoles
 
 
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