G2R1000MT17J – GENESIC

Part Number:

G2R1000MT17J

Manufacturer:

GENESIC

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

PHILIPPINES

Description:

N-Channel, 1700V, 3A, 54W MOSFET, TO-263-7, Surface Mount

Datasheet:

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Product Details:

Overview

The G2R1000MT17J is a silicon carbide (SiC) N-Channel MOSFET manufactured by GENESIC. This device is designed for high-voltage, high-frequency switching applications. It features a voltage rating of 1700V, a continuous drain current of 3A, and a power dissipation of 54W. The G2R1000MT17J is supplied in a TO-263-7 package suitable for surface mount assembly.

Key Features

1700V Drain-Source Voltage
3A Continuous Drain Current
54W Power Dissipation
N-Channel Enhancement Mode
TO-263-7 Package

Applications

This SiC MOSFET is commonly used in power electronic systems requiring high efficiency and reliability. Its characteristics make it suitable for deployment in various power conversion and control circuits.

Solar Inverters
Power Factor Correction (PFC)
Electric Vehicle (EV) Chargers