FZT705TC – ZETEX

Overview

The Diodes Incorporated FZT705TC is a high-gain PNP Darlington bipolar junction transistor designed for applications demanding significant current amplification and voltage handling. Its key operational characteristic is the exceptionally low saturation voltage (Vce(sat)) at high collector currents, a critical factor for minimizing power dissipation in switching applications. However, designers must carefully consider the trade-off between this low Vce(sat) and the reduced switching speed inherent in Darlington configurations due to the increased junction capacitance and the need to discharge the base-emitter capacitance of two cascaded transistors.

Key Features

• Collector-Emitter Breakdown Voltage (Vceo): 120 V
• Continuous Collector Current (Ic): 2 A
• Maximum Power Dissipation: 2 W
• DC Current Gain (hFE) Min: 3000 @ 1A, 5V
• Transition Frequency (fT): 160 MHz
• Package: SOT-223-3 (TO-261-4, TO-261AA)

Applications

The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.

• Low-side switching of inductive loads in power management circuits
• High-current LED driver stages with minimal voltage drop
• Relay driving circuits requiring robust current sinking capability
• Complementary output stages in audio amplifiers for enhanced current gain