FQT13N06LTF – ONSEMI

 
Part Number:
FQT13N06LTF
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
SOUTH KOREA
 
 
Description:

N‑Channel MOSFET, 60 V, 2.8 A, SOT223‑4

 
 
Datasheet:
 
 
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Product Details:

Overview

The FQT13N06LTF is an N-Channel enhancement mode MOSFET manufactured by ONSEMI. This transistor is designed for power switching applications requiring efficient performance. It features a drain-source voltage rating of 60V and a continuous drain current of 2.8A. The FQT13N06LTF is supplied in a space-saving SOT223-4 surface-mount package.

Key Features

  • N-Channel Enhancement Mode
  • VDS: 60V
  • ID: 2.8A
  • RDS(on): 0.11 Ohm (VGS= 10V)

Applications

This MOSFET is suitable for a variety of switching and power management tasks. Its characteristics make it useful in circuits where efficient control of current flow is needed.

  • DC-DC Converters
  • Load Switching
  • Power Management Circuits
 
 
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