FQP17P06 – FSC
P‑Channel MOSFET, 60 V, 17 A, TO‑220 Package
Stock Quantity: 473
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 1.86 |
| 10+ | |
| 50+ | |
| 100+ |
473 in stock
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- 6 month warranty on all stock items
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Overview
The onsemi FQP17P06 is a robust P-channel MOSFET designed for efficient power switching applications. Its critical operational characteristic is the low on-resistance (Rds(on)) of 120mΩ at 8.5A and 10V Vgs, which minimizes conduction losses crucial for thermal management. A key design consideration when utilizing this device is managing the gate charge (Qg) of 27nC; while enabling fast switching, excessive gate drive current can lead to premature breakdown or increased switching losses, necessitating careful driver circuit design.
Key Features
- P-Channel MOSFET, 60V Vdss
- Continuous Drain Current: 17A (Tc)
- Rds On (Max): 120mΩ @ 8.5A, 10V Vgs
- Gate Charge (Qg) Max: 27 nC @ 10 V
- Power Dissipation Max: 79W (Tc)
- Through Hole TO-220-3 Package
Applications
The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.
- High-side load switching in battery-powered devices
- Inrush current limiting for sensitive power supplies
- Reverse polarity protection circuits
- Switching regulator control loops in moderate power systems
